Shallow trench isolation structure for strained Si on SiGe

Details Shallow trench isolation structure for strained Si on SiGe Shallow trench isolation structure for strained Si on SiGe

2007-02-27

2007-02-27

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S435000, C257SE21546

Reexamination Certificate

active

11172707

ABSTRACT:
A structure, and a method for fabricating the structure, for the isolation of electronic devices is disclosed. The electronic devices are processed in substrates comprising a SiGe based layer underneath a strained Si layer. The isolation structure comprises a trench extending downward from the substrate top surface and penetrating into the SiGe based layer, forming a sidewall in the substrate. An epitaxial Si liner is selectively deposited onto the trench sidewall, and subsequently thermally oxidized. The trench is filled with a trench dielectric, which protrudes above the substrate top surface.

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