Shallow trench isolation (STI) method employing gap filling sili

Details Shallow trench isolation (STI) method employing gap filling sili Shallow trench isolation (STI) method employing gap filling sili

1997-06-12

1998-04-21

Dang, Trung

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438437, 438789, 148DIG50, H01L 2176

Patent

active

057417407

ABSTRACT:
A method for filling a trench within a silicon substrate. There is first provided a silicon substrate having a trench formed therein. There is then oxidized thermally the silicon substrate to form within the trench a thermal silicon oxide trench liner layer. There is then formed upon the thermal silicon oxide trench liner layer a conformal silicon oxide intermediate layer formed through a plasma enhanced chemical vapor deposition (PECVD) method employing a silane silicon source material. Finally, there is then formed upon the conformal silicon oxide intermediate layer a gap filling silicon oxide trench fill layer through an ozone assisted sub-atmospheric pressure thermal chemical vapor deposition (SACVD) method employing an ozone oxidant and a tetra-ethyl-ortho-silicate (TEOS) silicon source material. To provide improved properties of the gap filling silicon oxide trench fill layer the thermal silicon oxide trench liner layer may be treated with a nitrogen containing plasma prior to forming the conformal silicon oxide intermediate layer thereupon.

REFERENCES:
patent: 4950624 (1990-08-01), Inuzima et al.
patent: 5410176 (1995-04-01), Liou et al.
patent: 5518959 (1996-05-01), Jang et al.
patent: 5536681 (1996-07-01), Jang et al.
patent: 5665635 (1997-09-01), Kwon et al.

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