Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2006-06-06
2006-06-06
Blum, David S. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
Reexamination Certificate
active
07056804
ABSTRACT:
A method of making and shallow trench isolation feature including 1) providing a semiconductor substrate, 2) forming a polish stop layer over the semiconductor substrate, 3) forming a nitride containing layer over the polish stop layer, 4) forming a shallow trench layer through a portion of the nitride containing layer, a portion of the polish stop layer and a portion of the semiconductor substrate, 5) removing the nitride containing layer by a chemical mechanical polishing process, and 6) planarizing the shallow trench layer and the polish stop layer until a surface of the shallow trench layer and a surface of the polish stop layer are co-planar.
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Lyons Christopher F.
Subramanian Ramkumar
Advanced Micro Devices , Inc.
Blum David S.
Renner , Otto, Boisselle & Sklar, LLP
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