Shallow trench isolation planarized by wet etchback and...

Details Shallow trench isolation planarized by wet etchback and... Shallow trench isolation planarized by wet etchback and...

2005-03-22

2005-03-22

Mai, Anh Duy (Department: 2814)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S692000

Reexamination Certificate

active

06869858

ABSTRACT:
A method for forming a series of patterned planarized aperture fill layers within a series of apertures within a topographic substrate layer employed within a microelectronics fabrication. There is first provided a topographic substrate layer employed within a microelectronics fabrication, where the topographic substrate layer comprises a series of mesas of substantially equivalent height but of differing widths and the series of mesas is separated by a series of apertures. There is then formed upon the topographic substrate layer a blanket aperture fill layer. The blanket aperture fill layer is formed employing a simultaneous deposition and sputter method. The blanket aperture fill layer fills the series of apertures to a planarizing thickness at least as high as the height of the mesas while simultaneously forming a series of protrusions of the blanket aperture fill layer corresponding with the tops of the series of mesas, where the thickness of a protrusion of the blanket aperture fill layer over a narrow mesa is less than the thickness of a protrusion of the blanket aperture fill layer over a wide mesa. The simultaneous deposition and sputter method employs a deposition rate:sputter rate ratio which provides sufficient thickness of the blanket aperture fill layer over the narrow mesa to insure coverage of the edges of the mesas. A blanket etching process is employed to remove a portion of the blanket aperture fill layer so that chemical mechanical polish (CMP) planarizing of the residual blanket aperture fill layer forms the series of patterned planarized aperture fill layers within the series of apertures.

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