Shallow trench isolation formation with improved trench edge oxi

Details Shallow trench isolation formation with improved trench edge oxi Shallow trench isolation formation with improved trench edge oxi

1997-12-18

1999-10-19

Chaudhuri, Olik

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438296, H01L 218242

Patent

active

059703636

ABSTRACT:
A shallow trench isolation structure is formed which enables the growth of a high quality gate oxide at the trench edges. Embodiments include forming a photoresist mask directly on a pad oxide layer which, in turn, is formed on a main surface of a semiconductor substrate or an epitaxial layer on a semiconductor substrate. After masking, the substrate is etched to form a trench, an oxide liner is grown in the trench surface, and a polish stop layer is deposited over the oxide liner and the pad oxide layer. The polish stop layer is then masked to the trench edges, and the polish stop in the trench etched away. The trench is then filled with an insulating material, the insulating material is planarized, and the polish stop is removed by etching. Thus, the oxide liner is allowed to grow on the trench edges without the restraint of a polish stop, resulting in a thick, rounded oxide on the trench edges. Additionally, no polish stop layer remains in the trench to cause unwanted electrical effects.

REFERENCES:
patent: 4952524 (1990-08-01), Lee et al.
patent: 5087586 (1992-02-01), Chan et al.
patent: 5234845 (1993-08-01), Aoki et al.
patent: 5236863 (1993-08-01), Iranmanesh
patent: 5264395 (1993-11-01), Bindal et al.
patent: 5472904 (1995-12-01), Figura et al.

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