Shallow trench isolation formation

Details Shallow trench isolation formation Shallow trench isolation formation

2006-08-08

2006-08-08

Wojciechowicz, Edward (Department: 2815)

Semiconductor device manufacturing: process

Chemical etching

Having liquid and vapor etching steps

C257S368000

Reexamination Certificate

active

07087531

ABSTRACT:
A method and structure for forming a semiconductor structure. A semiconductor substrate is provided. A trench is formed within the semiconductor substrate. A first layer of electrically insulative material is formed within the trench. A first portion and a second portion of the first layer of electrically insulative material is removed. A second layer of electrically insulative material is selectively grown on the first layer comprising the removed first portion and the removed second portion.

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