Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-09-25
2007-09-25
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE23145
Reexamination Certificate
active
10732953
ABSTRACT:
To isolate two active regions formed on a silicon-on-insulator (SOI) substrate, a shallow trench isolation region is filled with liquid phase deposited silicon dioxide (LPD-SiO2) while avoiding covering the active areas with the oxide. By selectively depositing the oxide in this manner, the polishing needed to planarize the wafer is significantly reduced as compared to a chemical-vapor deposited oxide layer that covers the entire wafer surface. Additionally, the LPD-SiO2does not include the growth seams that CVD silicon dioxide does. Accordingly, the etch rate of the LPD-SiO2is uniform across its entire expanse thereby preventing cavities and other etching irregularities present in prior art shallow trench isolation regions in which the etch rate of growth seams exceeds that of the other oxide areas.
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Hakey Mark Charles
Holmes Steven John
Horak David Vaclav
Koburger III Charles William
Mitchell Peter H.
International Business Machines - Corporation
Wood Herron & Evans LLP
Zarneke David A.
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