Shallow trench isolation dummy pattern and layout method...

Details Shallow trench isolation dummy pattern and layout method... Shallow trench isolation dummy pattern and layout method...

2008-05-07

2010-12-07

Levin, Naum B (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000, C716S030000, C257S374000, C257S401000, C257S506000, C257S510000

Reexamination Certificate

active

07849432

ABSTRACT:
A dummy cell pattern for shallow trench isolation (STI). Active and shallow trench isolation areas are bounded by a circumference. An active area pattern completely overlaps the active area and a first polysilicon pattern in the shallow trench isolation area is outside the active area pattern. Layout methods using the same are also disclosed.

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