Shallow trench isolation

Details Shallow trench isolation Shallow trench isolation

2006-08-15

2006-08-15

Tsai, H. Jey (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S427000, C438S435000

Reexamination Certificate

active

07091104

ABSTRACT:
A method for forming an isolation structure on a semiconductor substrate includes opening a portion of a pad oxide layer overlying the substrate using a process gas including an etchant gas and a polymer-forming gas. A portion of the substrate exposed by the opening step is etched to form a trench having a first slope and a second slope. The first slope is greater than 45 degrees, and the second slope is less than 45 degrees. The trench is filled to form the isolation structure.

REFERENCES:
patent: 5994229 (1999-11-01), Chen et al.
patent: 6218309 (2001-04-01), Miller et al.
patent: 6274457 (2001-08-01), Sakai et al.
patent: 2003/0067035 (2003-04-01), Tews et al.
patent: 2004/0072451 (2004-04-01), Choi

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