Shallow SIMOX processing method using molecular ion implantation

Details Shallow SIMOX processing method using molecular ion implantation Shallow SIMOX processing method using molecular ion implantation

1994-07-27

1995-07-25

Fourson, George

Fishing, trapping, and vermin destroying

437 62, H01L 2176

Patent

active

054361753

ABSTRACT:
The invention provides a method of forming shallow SIMOX (Separation by IMplantation of OXygen) substrates by implantation of molecular oxygen ions (O.sub.2 +), instead of implanting atomic oxygen ions (O+) as is done in prior art SIMOX processes. Use of molecular oxygen ions (O.sub.2 +) doubles the yield of oxygen atoms implanted for each unit of electric charge deposited in the wafer. The resultant structure, after annealing, has a defect density which is not substantially different from SIMOX processing using atomic oxygen ions (O+). An alternative method for implanting molecular nitrogen ions is also disclosed.

REFERENCES:
patent: 4317686 (1982-03-01), Anand et al.
patent: 4676841 (1987-06-01), Celler
patent: 4740481 (1988-04-01), Wilson et al.
patent: 4810664 (1989-03-01), Kamins et al.
patent: 4837172 (1989-06-01), Mizuno et al.
patent: 4975126 (1990-12-01), Margail et al.
patent: 5047356 (1991-09-01), Li et al.
patent: 5080730 (1992-01-01), Wittkower
patent: 5143858 (1992-09-01), Tomozane et al.
patent: 5196355 (1993-03-01), Wittkower
Lam, H., et al., "Silicon On Insulator by Oxygen Ion Implantation"--Journal of Crystal Growth, 63, (1983), pp. 554-558.
Ishikawa, Y., et al., "Preparation of Thin . . . Oxygen Ion Implantation", Jap. J. Appl. Phys., vol. 30(10), Oct. 1991, pp. 2427-2431.

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