Shallow self isolated doped implanted silicon process

Details Shallow self isolated doped implanted silicon process Shallow self isolated doped implanted silicon process

2006-08-08

2006-08-08

Toledo, Fernando L. (Department: 2823)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S300000, C438S304000, C257SE21147, C257SE21149, C257SE21150

Reexamination Certificate

active

07087503

ABSTRACT:
A process and structure for forming electrical devices. The process and structure provide for forming an insulating layer on a substrate. A conductive region is then formed in the insulating layer by implanting silicon atoms into the insulating layer. Further, a plurality of different conductive regions can be formed in the insulating layer. An electrical device such as a transistor or a diode can then be formed in each of the conductive regions. Because the conductive regions are formed in a conductive region which is largely electrically isolated from other conductive regions there is little possibility for adjacent devices to cause interference.

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