Series diode thermally assisted MRAM

Details Series diode thermally assisted MRAM Series diode thermally assisted MRAM

2007-02-20

2007-02-20

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S055000

Reexamination Certificate

active

11089688

ABSTRACT:
An information storage device is provided. The information storage device may be a magnetic random access memory (MRAM) device including a resistive cross point array of spin dependent tunneling (SDT) junctions or magnetic memory elements, with word lines extending along rows of the SDT junctions and bit lines extending along the columns of the SDT junctions. The present design includes a plurality of heating elements connected in series with associated magnetic memory elements, each heating element comprising a diode. Voltage applied to a magnetic memory element and associated heating element causes reverse current to flow through the diode, thereby producing heat from the diode and heating the magnetic memory element, thereby facilitating the write function of the device.

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