Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-06-29
2009-12-22
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S799000, C257SE21134
Reexamination Certificate
active
07635656
ABSTRACT:
A method for configuring J electromagnetic radiation sources (J≧2) to serially irradiate a substrate. Each source has a different function of wavelength and angular distribution of emitted radiation. The substrate includes a base layer and I stacks (I≧2; J≦I) thereon. Pjdenotes a same source-specific normally incident energy flux on each stack from source j. in each of I independent exposure steps, the I stacks are concurrently exposed to radiation from the J sources, Viand Sirespectively denote an actual and target energy flux transmitted into the substrate via stack i in exposure step i (i=1, . . . , I). t(i) and Pt(i)are computed such that: Viis maximal through deployment of source t(i) as compared with deployment of any other source for i=1, . . . , I; and an error E being a function of |V1−S1|, |V2−S2|, . . . , |Vi−Si| is about minimized with respect to Pi(i=1, . . . , I).
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Anderson Brent Alan
Nowak Edward Joseph
Canale Anthony J.
International Business Machines - Corporation
Lindsay, Jr. Walter L
Patel Reema
Schmeiser Olsen & Watts
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