Serial diode cell and nonvolatile memory device using the same

Details Serial diode cell and nonvolatile memory device using the same Serial diode cell and nonvolatile memory device using the same

2007-02-06

2007-02-06

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S175000, C365S117000, C365S065000, C365S072000, C257S046000, C257S295000

Reexamination Certificate

active

10876463

ABSTRACT:
A nonvolatile memory device features a serial diode cell as a cross-point cell using a nonvolatile ferroelectric capacitor and a serial diode chain. The serial diode cell comprises a ferroelectric capacitor and a serial diode switch. The ferroelectric capacitor, located where a word line and a bit line are crossed, stores values of logic data. The serial diode switch is connected between the ferroelectric capacitor and the bit line and selectively switched depending on voltages applied to the word line. The nonvolatile memory device using a serial diode cell comprises a plurality of serial diode cell arrays, a plurality of word line driving units and a plurality of sense amplifiers. Each of the plurality of serial diode cell arrays each includes a single serial diode cell where a word line and a bit line are crossed. The plurality of word line driving units selectively drive the word line. The plurality of sense amplifiers sense and amplify data transmitted through the bit line.

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