Sequential shared access lines memory cells

Details Sequential shared access lines memory cells Sequential shared access lines memory cells

1984-12-31

1987-03-03

Moffitt, James W.

Static information storage and retrieval

Systems using particular element

Capacitors

365184, G11C 1124

Patent

active

046480730

ABSTRACT:
A memory array is provided which includes a common sense line to which is connected first and second series of cells, each cell of each series includes a storage capacitor, a switching device and a bit line connected to a plate of the storage capacitor, with a common word line connected to the control electrode of each of the switching devices. The switching devices, preferably field effect transistors, of each series of cells have progressively higher threshold voltages beginning at the sense line, and the voltage applied to the common word line has a magnitude greater than that of the highest threshold voltage. Data is stored into or read from the storage capacitors by selecting the common word line and the bit line of the desired cell in a sequential manner.

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L. Arzubi et al, IBM Technical Disclosure Bulletin, vol. 23, No. 6, Nov. 1980, pp. 2331-2332, "One-Device Memory Cell Arrangement with Improved Sense Signals".

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