Sequential oxygen plasma treatment and chemical mechanical polis

Details Sequential oxygen plasma treatment and chemical mechanical polis Sequential oxygen plasma treatment and chemical mechanical polis

1997-06-10

1999-11-02

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438692, 156345, H01L 213105

Patent

active

059769793

ABSTRACT:
A chemical mechanical polish (CMP) planarizing method for forming a planarized organo-functional siloxane polymer dielectric layer within a microelectronics fabrication. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate an organo-functional siloxane polymer dielectric layer. The organo-functional siloxane polymer dielectric layer is then partially treated with an oxygen containing plasma to form from the organo-functional siloxane polymer dielectric layer an oxygen containing plasma treated organo-functional siloxane polymer dielectric upper layer and an organo-functional siloxane polymer dielectric lower residue layer. Finally, the oxygen containing plasma treated organo-functional siloxane polymer dielectric upper layer is planarized through a chemical mechanical polish (CMP) planarizing method to form a planarized oxygen containing plasma treated organo-functional siloxane polymer dielectric upper layer.

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patent: 5645736 (1997-07-01), Allman
patent: 5786624 (1998-07-01), Havemann et al.

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