Sequential lithographic methods to reduce stacking fault...

Details Sequential lithographic methods to reduce stacking fault... Sequential lithographic methods to reduce stacking fault...

2007-06-05

2007-06-05

Jackson, Jerome (Department: 2815)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C438S931000, C257S628000, C257S105000, C257S627000, C257S077000, C257SE21054, C257SE21699

Reexamination Certificate

active

11425954

ABSTRACT:
An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes first features therein. Second features are then formed in the first epitaxial layer. The second features include at least one sidewall that is oriented nonparallel to the crystallographic direction. A second epitaxial silicon carbide layer is then grown on the surface of the first epitaxial silicon carbide layer that includes the second features therein.

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