Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-03
2006-10-03
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
48, 48, 48, 48, 48, 48, 48, C257S070000, C257SE21193
Reexamination Certificate
active
07115456
ABSTRACT:
A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed in parallel to an imaginary line connecting the alignment keys with information for a distance between the mask and the alignment key. The SLS device includes a laser beam generator for irradiating laser beams; a mask having a plurality of areas; a mask stage for moving the mask loaded thereto, to transmit a laser beam through a selective area of the mask; and a substrate stage for moving a substrate loaded thereto, to change portions of the substrate irradiated with the laser beam passing through the mask.
REFERENCES:
patent: 6322625 (2001-11-01), Im
patent: 6368945 (2002-04-01), Im
patent: 7033434 (2006-04-01), Kim
“Single-Crystal Si Films Via A Low-Substrate-Temperature Excimer-Laser Crystallization Method”, Robert S. Sposili, M.A. Crowder and James S. Im, Mat. Res. Soc. Symp. Proc. vol. 452, pp. 956-957, 1997.
Jung Yun Ho
Kim Young Joo
Ahmadi Mohsen
Birch & Stewart Kolasch & Birch, LLP
Lebentritt Michael
LG.Philips LCD Co. , Ltd.
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