Sequential deposition process for forming Si-containing films

Details Sequential deposition process for forming Si-containing films Sequential deposition process for forming Si-containing films

2008-04-15

2008-04-15

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21356

Reexamination Certificate

active

07358194

ABSTRACT:
A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film to reduce the chlorine content of the Si film. The Si film may be deposited selectively or non-selectively on the substrate and the deposition may be self-limiting or non-self-limiting. Other embodiments provide a method for forming SiGe films in a sequential deposition process.

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