Separation-material composition for photo-resist and...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Finishing or perfecting composition or product

Reexamination Certificate

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Reexamination Certificate

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07341827

ABSTRACT:
One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.

REFERENCES:
patent: 6194365 (2001-02-01), Lee
patent: 2003/0130148 (2003-07-01), Lee et al.
patent: 2005/0014667 (2005-01-01), Aoyama et al.
patent: 2000-258924 (2000-09-01), None
patent: 2001-345303 (2001-12-01), None

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