Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-04-15
2008-04-15
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
11847122
ABSTRACT:
A magnetoresistive device is provided with separate read and write architecture. In one embodiment, a magnetic tunnel junction (MTJ) has a nonmagnetic nonconductive barrier layer sandwiched between two ferromagnetic conducting layers. A first read line having a first resistance is coupled to a first ferromagnetic layer and a second read line having a third resistance is coupled to a second ferromagnetic layer such that a voltage difference between the two read lines will produce a current flowing perpendicularly through each layer of the MTJ. A first write line having a second resistance is separated from the first read line by a first insulator and a second write line having a fourth resistance is separated from the second read line by a second insulator, and wherein the second and fourth resistances are lower than the first and third resistance.
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Auduong Gene N.
Honeywell International , Inc.
McDonnell Boehnen & Hulbert & Berghoff LLP
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