Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2008-04-15
2008-04-15
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07359235
ABSTRACT:
A magnetoresistive device is provided with separate read and write architecture. In one embodiment, a magnetic tunnel junction (MTJ) has a nonmagnetic nonconductive barrier layer sandwiched between two ferromagnetic conducting layers. A first read line having a first resistance is coupled to a first ferromagnetic layer and a second read line having a third resistance is coupled to a second ferromagnetic layer such that a voltage difference between the two read lines will produce a current flowing perpendicularly through each layer of the MTJ. A first write line having a second resistance is separated from the first read line by a first insulator and a second write line having a fourth resistance is separated from the second read line by a second insulator, and wherein the second and fourth resistances are lower than the first and third resistance.
REFERENCES:
patent: 6391483 (2002-05-01), Zhu et al.
patent: 6498747 (2002-12-01), Gogl et al.
patent: 6522573 (2003-02-01), Saito et al.
patent: 6730949 (2004-05-01), Kishi et al.
patent: 6781910 (2004-08-01), Smith
patent: 6885582 (2005-04-01), Sharma
patent: 6897101 (2005-05-01), Weitz
patent: 6901005 (2005-05-01), Perner et al.
patent: 6912152 (2005-06-01), Iwata et al.
patent: 2004/0001368 (2004-01-01), Huggins
patent: 2005/0152180 (2005-07-01), Katti
patent: WO 02/084706 (2002-10-01), None
Scheuerlein, Roy E., “Magneto-Resistive IC Memory Limitations and Architecture Implications”, Nonvolatile Memory Technology Conference, 1998. 1998 Proceedings. Seventh Biennial IEEE Alburqueque, NM, USA Jun. 22-24, 1998, New York, NY, USA, IEEE, US, Jun. 22, 1998, pp. 47-50, XP00309468.
Slaughter, “Magnetic Tunnel Junction Materials for Electronics Applications,” JOM (Jun. 2000). (www.tms.org/pubs/journals/JOM/0006/Slaughter/Slaughter-0006.html).
Daughton, “Magnetoresistive Random Accesss Memory (MRAM),” pp. 1-13 (Feb. 4, 2000).
Auduong Gene N.
Honeywell International , Inc.
McDonnell Boehnen & Hulbert & Berghoff LLP
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