Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-09-27
1999-09-28
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 53, 257 56, 257 58, 257 59, 257 60, 257 61, 257 62, 257 72, 25037009, 25037011, 25037014, G01T 124
Patent
active
059593121
ABSTRACT:
A sensor device includes a sensing element and a thin film transistor (TFT), and the TFT's channel leads include semiconductor channel leads formed in a layer of microcrystalline silicon (.mu.c-Si). The sensing element is formed in a semiconductor layer that includes silicon-based material and is over the .mu.c-Si layer. Each of the semiconductor channel leads has a structure that prevents formation of bubbles at the lower and upper sides of the .mu.c-Si layer during production of the sensing element. The TFT's channel can be formed in a layer of intrinsic silicon-based material under the .mu.c-Si layer and the .mu.c-Si layer can be a deposited doped layer; or the TFT's channel can be formed in an intrinsic .mu.c-Si layer in which the leads are formed by implanting a dopant. The .mu.c-Si layer can include a sufficiently small amount of hydrogen to prevent formation of bubbles; it can include crystalline grain structures permitting hydrogen to dissipate at a sufficient rate to prevent formation of bubbles; or it can have interfaces sufficiently stable to prevent formation of bubbles.
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Fulks Ronald T.
Tsai Chuang-Chuang
Yao William W.
Abraham Fetsum
Xerox Corporation
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