Sensor with at least one micromechanical structure and...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257S417000, C257S418000, C257S419000, C257S420000

Reexamination Certificate

active

06936902

ABSTRACT:
A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.

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patent: 5139624 (1992-08-01), Searson
patent: 5338416 (1994-08-01), Mlcak
patent: 5919364 (1999-07-01), Lebouitz et al.
patent: 6378378 (2002-04-01), Fisher
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Lebouitz K.S., et al: “Permeable Polysilicon Etch-Access Windows . . . ” International Conference on Solid-State Sensors and Actuators and Eurosensors, Jun. 25, 1995, pp. 224-227.
Anderson R.C. et al: “Porous Polycrystalline Silicone . . . ” Journal of Microelectromechanical Systems, Mar. 1994, USA, BD. 3, NR. 1, pp. 10-18.

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