Sensor with antigen chemically bonded to a semiconductor device

Details Sensor with antigen chemically bonded to a semiconductor device Sensor with antigen chemically bonded to a semiconductor device

1990-04-12

1992-11-03

Niebling, John

Chemistry: electrical and wave energy

Apparatus

Electrolytic

204418, G01N 2726

Patent

active

051605970

ABSTRACT:
A description is given, together with relative preparation processes, of a sensor containing an immunochemical membrane and a device of EOS or CHEMFET type containing surface silicon oxide adhering to said membrane via a polysiloxane matrix, characterized in that the immunochemical membrane is formed from a functionalized antigen or from the same functionalized antigen bonded to a protein, said immunochemical membrane being bonded chemically to the polysiloxane matrix by functional groups present on the same antigen or by bifunctional coupling agents.

REFERENCES:
patent: 4269682 (1981-05-01), Yano et al.
patent: 4708947 (1987-11-01), Maruyama et al.
patent: 4839017 (1989-06-01), Taniguchi et al.
Biological Abstracts, vol. 81, No. 9, 1986, p. AB-945, 86703, S. J. Huber, "Improved Solid-Phase Enzyme Immunoassay Systems in the Parts-per-Trillion Range for Atrazine in Fresh Water".

Affiliated with

Also associated with

Rating

Sensor with antigen chemically bonded to a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sensor with antigen chemically bonded to a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sensor with antigen chemically bonded to a semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2049815