Sensor protection using a non-volatile memory cell

Details Sensor protection using a non-volatile memory cell Sensor protection using a non-volatile memory cell

2009-03-19

2011-11-08

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S225700, C365S225500, C365S148000, C365S100000

Reexamination Certificate

active

08054706

ABSTRACT:
A method and apparatus for protecting an electrical device using a non-volatile memory cell, such as an STRAM or RRAM memory cell. In some embodiments, a memory element is connected in parallel with a sensor element, where the memory element is configured to be repetitively reprogrammable between a high resistance state and a low resistance state. The memory element is programmed to the low resistance state when the sensor element is in a non-operational state and reprogrammed to the high resistance state when the sensor element is in an operational state.

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Muralikrishnan Balakrishnan, “Germanium Sulfide-Based Solid Electrolytes for Non-Volatile Memory,” PhD Thesis, 2006, Arizona State University, Tempe.

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