Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With window means
Reexamination Certificate
2007-12-11
2008-09-09
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With window means
C257S098000, C257S099000, C257S685000, C257S686000, C257S723000, C257S777000
Reexamination Certificate
active
07423335
ABSTRACT:
An image sensor multi-chips package structure, includes a first package including a first chip with image sensors having first bonding pads and micro lens on a first active surface, a first die receiving window and first conductive inter-connecting through holes penetrated from a first upper contact pads on a first upper surface of the first chip to a first lower contact pads on a first lower surface of the first chip, wherein a first upper build up layer on the active surface of the first chip coupling from the first bonding pads to the first upper contact pads; a second package comprising a second chip having second bonding pads on a second active surface, a second die receiving window and second conductive inter-connecting through holes penetrated from a second upper contact pads of a second upper surface of the second chip to a second lower contact pads on a second lower surface of the second chip, wherein a second upper build up layers on the second upper surface for coupling from the second bonding pads to the second upper contact pads, and second lower build up layers under the second lower surface for coupling from the second lower contact pads to terminal pads located under the second lower surface; and inter-connecting structures coupled between the first lower contact pads to the second upper contact pads.
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Chang Jui-Hsien
Yang Wen-Kun
Advanced Chip Engineering Technology Inc.
Kusner & Jaffe
Soward Ida M
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