Sensor chip having a diode portions and a thin-wall portion

Details Sensor chip having a diode portions and a thin-wall portion Sensor chip having a diode portions and a thin-wall portion

1997-10-27

1999-08-03

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

257415, 257417, 257418, H01L 2982

Patent

active

059329211

ABSTRACT:
When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.

REFERENCES:
patent: Re34893 (1995-04-01), Fujii
patent: 5511428 (1996-04-01), Goldberg et al.
patent: 5514898 (1996-05-01), Hartaner
patent: 5614753 (1997-03-01), Uchikoshi et al.

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