Sensitive protection component for a subscriber line interface c

Details Sensitive protection component for a subscriber line interface c Sensitive protection component for a subscriber line interface c

1996-05-01

1997-11-04

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

256356, 256361, 256362, 256577, 361 91, 361111, 361119, H01L 2362

Patent

active

056843224

ABSTRACT:
A high-speed monolithic protection semiconductor component implements two NPN transistors and two diodes. The cathodes of the diodes and the collectors of the transistors are connected to a common terminal. The anode of a diode is connected to the emitter of a transistor. The component includes a low-doped N-type semiconductor substrate whose bottom surface has a highly doped layer coated with a first metallization, first and second highly doped P-type regions, a low-doped P-type well in which are formed N-type third and fourth regions and a P-type fifth region. A second metallization connects the first and third regions. A third metallization connects the second and fourth regions. A fourth metallization is integral with the fifth region.

REFERENCES:
patent: 4821315 (1989-04-01), Remmerie et al.
patent: 4847724 (1989-07-01), Renous
patent: 5304802 (1994-04-01), Kumagai
patent: 5304823 (1994-04-01), Byatt
patent: 5543650 (1996-08-01), Au et al.

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