Sensitive positive electron beam resists

Details Sensitive positive electron beam resists Sensitive positive electron beam resists

1982-03-29

1983-11-08

Morgenstern, Norman

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Readily visible image formation

427 431, 427 44, 427273, 430286, 430296, 430320, B05D 306

Patent

active

044143133

ABSTRACT:
A process for making highly sensitive positive electron beam resists comprised of copolymers of methacrylic acid (MAA) and methyl .alpha.-chloroacrylate (MCA) is disclosed in which a thin film of high molecular weight MAA/MCA copolymer is applied to a suitable substrate. Prior to exposure, the copolymer is prebaked at a temperature below the decomposition temperature to improve the sensitivity and resolution of the resist. The exposed resist is developed by spraying with a suitable solvent. The positive electron resists produced in accordance with the present invention exhibit a high sensitivity and good submicron resolution.

REFERENCES:
patent: 4276365 (1981-06-01), Yoneda et al.

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