Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1995-09-15
1996-06-18
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257418, 257420, 257472, 257476, 257484, 257486, 7351416, 73728, 73862473, H01L 2982
Patent
active
055280692
ABSTRACT:
A sensing transducer (10,30) and a method therefor uses a Schottky junction (12) having a conductive layer (16) disposed on a semiconductor substrate (14). The conductive layer (16) is generally formed from the reaction of a metal with a portion of the semiconductor substrate (14). One example of the conductive layer (16) is a metal silicide layer. In one pressure sensing approach, a substantially constant reverse current (I.sub.1) is applied to the Schottky junction (12). The change in reverse output voltage of the junction (12) is proportional to the change in pressure on the junction (12) itself, and can thus be used to sense pressure. This output voltage change is significantly higher than that achieved with prior pressure transducers and permits the output signal of the transducer (10,30) according to the present invention to be substantially used without extra amplification or other conditioning.
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Murarka, "Refractory Silicides for Integrated Circuits," J. Vac. Sci. Technol., 17(4), Jul./Aug. 1980, pp. 775-793.
Mladenovic Dragan A.
Shah Mahesh
Mintel William
Motorola Inc.
Neel Bruce T.
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