Sensing the state of a storage cell including a magnetic...

Details Sensing the state of a storage cell including a magnetic... Sensing the state of a storage cell including a magnetic...

2006-10-03

2006-10-03

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000, C365S158000

Reexamination Certificate

active

07116576

ABSTRACT:
A storage device includes memory cells each including a magnetic element, where the memory cells include a first memory cell connected between a first voltage and a sense node, and at least second and third memory cells connected in parallel between the sense node and a reference voltage. A sampling circuit is coupled to the sense node, with the sampling circuit configured to receive a first voltage sample corresponding to an original state of the first memory cell, and to store a second voltage sample corresponding to a known state of the first memory cell after the first memory cell has been written to the known state. A differential amplifier compares the first and second voltage samples in their analog forms.

REFERENCES:
patent: 6650562 (2003-11-01), Holden et al.
patent: 6728153 (2004-04-01), Perner et al.
patent: 6751147 (2004-06-01), Smith et al.
patent: 6754123 (2004-06-01), Perner et al.
patent: 6791865 (2004-09-01), Tran et al.
patent: 6980455 (2005-12-01), Perner
patent: 2005/0105329 (2005-05-01), Nazarian

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