Sensing scheme for a non-volatile semiconductor memory cell

Details Sensing scheme for a non-volatile semiconductor memory cell Sensing scheme for a non-volatile semiconductor memory cell

2007-03-13

2007-03-13

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185290, C365S189070, C365S210130

Reexamination Certificate

active

11145551

ABSTRACT:
A method of sensing a state of a non-volatile semiconductor memory cell is provided. A memory cell current as well as a comparative current generated from at least one reference cell are compared with a predefined reference current while the gate voltages of the cells are varied. Sense amplifiers detect which of said currents first reaches the predefined reference current. The order of reaching the reference current is indicative of the state of the memory cell. In a preferred embodiment of the invention the comparative current is generated as an average of an erased reference cell current and a programmed reference cell current.

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