Sensing methodology for a 1T/1C ferroelectric memory

Details Sensing methodology for a 1T/1C ferroelectric memory Sensing methodology for a 1T/1C ferroelectric memory

1997-11-14

1999-03-09

Le, Vu A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, G11C 700

Patent

active

058809899

ABSTRACT:
A method of operating a 1T/1C ferroelectric memory having a memory cell coupled to a word line, a bit line, and a plate line, includes the steps of turning on the word line, energizing the plate line to establish a charge on the bit line, turning off the word line, and sensing the charge on the bit line while the word line is off.

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