Sensing current recycling method during self-refresh

Details Sensing current recycling method during self-refresh Sensing current recycling method during self-refresh

2007-03-27

2007-03-27

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S203000, C365S222000

Reexamination Certificate

active

11144791

ABSTRACT:
A bit line sensing scheme is provided for a semiconductor memory device that significantly reduces current drain during a self-refresh mode. After bit line sensing of a selected wordline and deactivation of the selected wordline, a capacitor is connected to a source node associated with a bit line sensing amplifier for the selected wordline to charge the capacitor with charge remaining on the bit line. Then, during the next activate-precharge cycle for another selected wordline, the capacitor is coupled to the source node of a bit line sensing amplifier associated with another selected wordline to discharge charge stored by the capacitor to the bit line associated with said other selected wordline. Thus, charge is returned from the bit line to the capacitor. This is where the self-refresh current reduction is achieved.

REFERENCES:
patent: 5625588 (1997-04-01), Seyyedy et al.
patent: 6292417 (2001-09-01), Seyyedy
patent: 6717875 (2004-04-01), Park
patent: 6829189 (2004-12-01), Lim et al.
patent: 6871155 (2005-03-01), Huang
patent: 2005/0052909 (2005-03-01), Mochida

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