Static information storage and retrieval – Floating gate – Particular biasing
Patent
1995-12-21
1997-04-01
Dinh, Son T.
Static information storage and retrieval
Floating gate
Particular biasing
36518522, 36518911, G11C 700
Patent
active
056173547
ABSTRACT:
The present invention discloses a circuit for both detecting and confirming the memory cell which can verify the state of program and erasure on the memory cell when it performs a programming and an erasure onto or out of the memory cell after a normal read-out operation.
REFERENCES:
patent: 5056063 (1991-10-01), Santin et al.
patent: 5388078 (1995-02-01), Arakawa
patent: 5396467 (1995-03-01), Liu et al.
Cha Byoung K.
Ha Chang W.
Dinh Son T.
Hyundai Electronics Industries Co,. Ltd.
LandOfFree
Sensing circuit to enhance sensing margin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sensing circuit to enhance sensing margin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sensing circuit to enhance sensing margin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-545025