Sensing circuit of a phase change memory and sensing method...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S196000, C365S210100, C365S203000

Reexamination Certificate

active

07933147

ABSTRACT:
A sensing circuit of a phase change memory. The sensing circuit comprises a data current source and a reference current source, a storage memory device and a reference memory device, a storage switch and a reference switch, an auxiliary current source and a comparator. First terminals of the storage memory device and the reference memory device are respectively coupled to the data current source and the reference current source. The storage switch and the reference switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The auxiliary current source is dynamically coupled to the first terminals of the storage memory device and the reference memory device. The comparator is coupled to the first terminals of the storage memory device and the reference memory device.

REFERENCES:
patent: 5036492 (1991-07-01), Runaldue
patent: 5699295 (1997-12-01), Yero
patent: 5717640 (1998-02-01), Hashimoto
patent: 5787042 (1998-07-01), Morgan
patent: 5889702 (1999-03-01), Gaultier et al.
patent: 6314014 (2001-11-01), Lowrey et al.
patent: 6434068 (2002-08-01), Harada et al.
patent: 6590807 (2003-07-01), Lowrey
patent: 6667900 (2003-12-01), Lowrey et al.
patent: 6707712 (2004-03-01), Lowery
patent: 6711080 (2004-03-01), Kern et al.
patent: 6731528 (2004-05-01), Hush et al.
patent: 6791859 (2004-09-01), Hush et al.
patent: 6791885 (2004-09-01), Casper et al.
patent: 6845052 (2005-01-01), Ho et al.
patent: 2007/0133269 (2007-06-01), Lee et al.
patent: 1549451 (2004-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sensing circuit of a phase change memory and sensing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sensing circuit of a phase change memory and sensing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sensing circuit of a phase change memory and sensing method... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2708034

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.