Sensing circuit for memories

Details Sensing circuit for memories Sensing circuit for memories

2007-06-15

2009-02-10

Ho, Hoai V (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S185200, C365S185210, C365S210100

Reexamination Certificate

active

07489574

ABSTRACT:
A memory apparatus includes a plurality of memory units, a sensing circuit and a bias-generating circuit. The plurality of memory units respectively outputs a data current to the sensing circuit, while the sensing circuit further includes a plurality of first transistors, a plurality of second transistors and a plurality of sensing amplifiers. In order to speed up the access time of the memory units, the bias-generating circuit rapidly provides a bias signal to the sensing circuit to turn on the first transistors of the sensing circuit. In the present invention, the sensing circuit uses a common reference voltage to reduce the circuit utilization area of the memory apparatus.

REFERENCES:
patent: 5258959 (1993-11-01), Dallabora et al.
patent: 5699295 (1997-12-01), Yero
patent: 6075726 (2000-06-01), Chen
patent: 6141246 (2000-10-01), Derman et al.
patent: 6424571 (2002-07-01), Pekny
patent: 2006/0158946 (2006-07-01), Taddeo

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