Sensing circuit for ferroelectric non-volatile memories

Details Sensing circuit for ferroelectric non-volatile memories Sensing circuit for ferroelectric non-volatile memories

2005-12-27

2005-12-27

Tran, Michael (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S185210

Reexamination Certificate

active

06980458

ABSTRACT:
A circuit for sensing a ferroelectric non-volatile information storage unit comprises a pre-charge circuit for applying a prescribed pre-charge voltage to a storage capacitor of the information storage unit. The pre-charge voltage causes a variation in a polarization charge of the storage capacitor, depending on an initial polarization state of the storage capacitor. A charge integration circuit integrates an electric charge proportional to the variation in polarization charge experienced by the storage capacitor. The charge integration circuit thus provides an output voltage depending on the polarization state of the storage capacitor. The charge integration circuit may comprises an integration capacitor and current mirror circuit, with a first mirror branch coupled to the pre-charge circuit and a second mirror branch coupled to the integration capacitor, for mirroring into the second mirror branch an electric charge supplied to the information storage unit to compensate for the variation in the polarization charge experienced by the storage capacitor.

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