Sensing circuit for a semiconductor memory

Details Sensing circuit for a semiconductor memory Sensing circuit for a semiconductor memory

2007-02-27

2007-02-27

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S210130

Reexamination Certificate

active

11194739

ABSTRACT:
A sensing circuit is provided for sensing semiconductor memory cells. The sensing circuit includes at least one first circuit branch, a feedback-controlled circuit element in the first circuit branch, a current-to-voltage conversion circuit in the first branch, and at least one comparator. The first circuit branch is coupled to a memory cell to be sensed so as to be run through by a current corresponding to a memory cell state. The feedback-controlled circuit element controls a memory cell access voltage, and the current-to-voltage conversion circuit converts the current into a corresponding converted voltage signal that is indicative of the memory cell state. The comparator compares the converted voltage signal with a comparison voltage for discriminating among at least two different states of the memory cell. The converted voltage signal corresponds to a control signal of the feedback-controlled circuit element. Also provided is a method of sensing a memory cell.

REFERENCES:
patent: 5528543 (1996-06-01), Stiegler
patent: 5815452 (1998-09-01), Shen
patent: 5886546 (1999-03-01), Hwang
patent: 6191979 (2001-02-01), Uekubo
patent: 6366497 (2002-04-01), Guliani et al.
patent: 2002/0186586 (2002-12-01), Conte et al.
patent: 101 56 728 (2003-06-01), None
European Search Report dated Feb. 23, 2005 for European Application No. 04103714.

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