Sensing amplifier circuit for data readout from a semiconductor

Details Sensing amplifier circuit for data readout from a semiconductor Sensing amplifier circuit for data readout from a semiconductor

1992-01-29

1994-03-01

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Differential sensing

365207, 365227, 307530, G11C 1134

Patent

active

052914526

ABSTRACT:
In a semiconductor memory device, two sense amplifiers are provided on one output signal line for reading data stored in a memory cell. The sense amplifiers are connected in parallel to each other. A control signal generation circuit generates a control signal so that one of the sense amplifiers which has a greater drive capability is activated during a predetermined time period after an address from which data are to be read out is changed, and that the sense amplifier having a smaller drive capability is activated during a time period other than the predetermined time period.

REFERENCES:
patent: 4445203 (1984-04-01), Iwahashi
patent: 4907201 (1990-03-01), Minami et al.
patent: 5068831 (1991-11-01), Hoshi et al.
1990 Symposium On VLSI Circuits, Jun. 1990, Honolulu USA, pp. 95-96, Nakai et al., `A 36 ns 1 Mbit CMOS EPROM With News Data Sensing Technique`.

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