Sensing a signal in a two-terminal memory array having...

Details Sensing a signal in a two-terminal memory array having... Sensing a signal in a two-terminal memory array having...

2008-05-27

2008-05-27

Auduong, Gene N. (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S158000, C365S171000

Reexamination Certificate

active

07379364

ABSTRACT:
A two-terminal memory array includes a plurality of first and second conductive traces. An address unit operatively applies a select voltage across a selected pair of the first and second conductive traces and applies a non-select voltage potential to unselected traces. A total current flowing in the selected first conductive trace and a leakage current flowing through unselected second conductive traces are sensed by a sense unit in a one cycle or a two cycle pre-read operation. The total and leakage currents can be combined with a reference signal to derive a data signal indicative of one of a plurality of conductivity profiles that represent stored data. The conductivity profiles can be stored in a resistive state memory element that is electrically in series with the selected first and second conductive traces.

REFERENCES:
patent: 3886577 (1975-05-01), Buckley
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 6185143 (2001-02-01), Perner et al.
patent: 6188616 (2001-02-01), Perner et al.
patent: 6204139 (2001-03-01), Liu et al.
patent: 6256247 (2001-07-01), Perner
patent: 6317375 (2001-11-01), Perner
patent: 6317376 (2001-11-01), Tran et al.
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6473332 (2002-10-01), Ignatiev et al.
patent: 6487106 (2002-11-01), Kozicki
patent: 6487124 (2002-11-01), Semi
patent: 6504221 (2003-01-01), Tran et al.
patent: 6531371 (2003-03-01), Hsu et al.
patent: 6606263 (2003-08-01), Tang
patent: 6608773 (2003-08-01), Lowrey et al.
patent: 6657888 (2003-12-01), Doudin et al.
patent: 6667900 (2003-12-01), Lowrey et al.
patent: 6678189 (2004-01-01), Tran
patent: 6707710 (2004-03-01), Holden
patent: 6707712 (2004-03-01), Lowery
patent: 6717874 (2004-04-01), Perner et al.
patent: 6731528 (2004-05-01), Hush et al.
patent: 6751147 (2004-06-01), Smith et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6754107 (2004-06-01), Khouri et al.
patent: 6768685 (2004-07-01), Scheuerlein
patent: 6807088 (2004-10-01), Tsuchida
patent: 6813177 (2004-11-01), Lowrey et al.
patent: 6825489 (2004-11-01), Kozicki
patent: 6826094 (2004-11-01), Perner et al.
patent: 6836421 (2004-12-01), Rinerson et al.
patent: 6836422 (2004-12-01), Perner et al.
patent: 6847544 (2005-01-01), Smith et al.
patent: 6856536 (2005-02-01), Rinerson et al.
patent: 6865104 (2005-03-01), Perner
patent: 6873544 (2005-03-01), Perner et al.
patent: 6885573 (2005-04-01), Sharma et al.
patent: 6888745 (2005-05-01), Ehiro et al.
patent: 6894938 (2005-05-01), Smith et al.
patent: 6898134 (2005-05-01), Smith et al.
patent: 6939724 (2005-09-01), Zhuang et al.
patent: 6940744 (2005-09-01), Rinerson et al.
patent: 6992920 (2006-01-01), Tamai et al.
patent: 6998698 (2006-02-01), Inoue et al.
patent: 6999366 (2006-02-01), Perner et al.
patent: 7002197 (2006-02-01), Perner et al.
patent: 7020006 (2006-03-01), Chevallier et al.
patent: 7029924 (2006-04-01), Hsu et al.
patent: 7038948 (2006-05-01), Hamilton et al.
patent: 7042757 (2006-05-01), Perner
patent: 7046043 (2006-05-01), Shibata et al.
patent: 7057258 (2006-06-01), Tran et al.
patent: 7060586 (2006-06-01), Li et al.
patent: 7061790 (2006-06-01), Morimoto et al.
patent: 7068204 (2006-06-01), Bathul et al.
patent: 7075817 (2006-07-01), Rinerson et al.
patent: 7079436 (2006-07-01), Perner et al.
patent: 7102948 (2006-09-01), Perner
patent: 7116576 (2006-10-01), Smith et al.
patent: 7130235 (2006-10-01), Perner et al.
patent: 7136300 (2006-11-01), Tran et al.
patent: 7148533 (2006-12-01), Hsu et al.
patent: 2003/0003675 (2003-01-01), Hsu
patent: 2003/0021148 (2003-01-01), Scheuerlein et al.
patent: 2003/0132456 (2003-07-01), Miyai et al.
patent: 2004/0141369 (2004-07-01), Noguchi
patent: 2005/0135148 (2005-06-01), Chevallier et al.
patent: 2005/0151156 (2005-07-01), Wu et al.
patent: 2006/0034124 (2006-02-01), Guterman et al.
patent: 2006/0039191 (2006-02-01), Perner et al.
patent: 2006/0044878 (2006-03-01), Perner et al.
patent: 2006/0050551 (2006-03-01), Perner
patent: 2006/0050552 (2006-03-01), Perner et al.
patent: 2006/0050582 (2006-03-01), Perner et al.
patent: 2006/0227639 (2006-10-01), Srowik et al.
patent: 1 376 598 (2004-01-01), None
patent: 1 376 598 (2004-01-01), None
U.S. Appl. No. 60/536,115, filed Jan. 13, 2004, Wu et al.
A.Baikalov, et al, “Field-driven hysteretic and reversible resistive switch at the Ag-Pr0.7Ca0.3MnO3 interface” Applied Physics Letters, vol. 83, No. 5, Aug. 4, 2003, pp. 957-959.
A. Beck, J. Bednorz, A. Bietsch, Ch. Gerber, C. Rossel, D. Widmer, “Reproducible switching effect in thin oxide films for memory applications,” Applied Physics Letters, vol. 77, No. 1, Jul. 3, 2000, pp. 139-141.
A. Sawa, et al, “Hysteretic current-volyage characteristics and resisitance switching at a rectifying Ti/Pr0.7Ca0.3MnO3interface” Applied Physics Letters, vol. 85, No. 18, Nov. 1, 2004, pp. 4073-4075.
C. Rossel, G.I. Meijer, D. Brémaud, D. Widmer, “Electrical current distribution across a metal-insulator-metal structure during bistable switching,” Journal of Applied Physics, vol. 90, No. 6, Sep. 15, 2001, pp. 2892-2898.
David Oxley, “Memory Effects in Oxide Films” in Oxides and Oxide Films, vol. 6, pp. 251-325 (Chapter 4) (Ashok. K. Vijh ed., Marcel Drekker) (1981).
J.G. Simmons and R.R. Verderber, “New Conduction and Reversible Memory Phenomena in Thin Insulating Films,” Proc. Roy. Soc. A., 301 (1967), pp. 77-102.
Liu et al., “A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films,” Non-Volatile Memory Technology Symposium, Nov. 7, 2001, pp. 1-7.
Liu et al., “Electric-pulse-induced reversible resistance change effect in magnetoresistive films,” Applied Physics Letters, vol. 76, No. 19, May 8, 2000, pp. 2749-2751.
R.E. Thurstans and D.P. Oxley, “The Electroformed metal-insulator-metal structure: A comprehensive model,” J. Phys. D.: Appl. Phys. 35 (2002), Apr. 2, 2002, pp. 802-809.
Y. Watanbe, J.G. Bednorz, A.Bietsch, Ch. Gerber, D. Widmer, A. Beck, “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals,” Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, pp. 3738-3740.
R. Oligschlaeger, R. Waser, R. Meyer, S. Karthäuser, R. Dittmann, “Resistive switching and data reliability of epitaxial (Ba,Sr)TiO thin films,” Applied Physics Letters, 88 (2006), 042901.
S. Lai, T. Lowrey, “OUM—A 180 nm nonvolatile memory cell element technology for standalone and embedded applications,” IEEE International Electron Device Meeting, Technical Digest, 803 (2001).
J. Mizusaki J, Y. Yonemura, H. Kamata, K. Ohyama, N. Mori, H. Takai, H. Tagawa, M. Dokiya, K. Naraya, T. Sasamoto, H. Inaba, T. Hashimoto, “Electronic conductivity, Seebeck coefficient, defect and electronic structure of nonstoichiometric La1-xSrxMnO3,” Solid State Ionics 132, 167 (2000).
Zhao Y. G. ; Rajeswari M. ; Srivastava R. C. ; Biswas A. ; Ogale S. B. ; Kang D. J. ; Prellier W. ; Zhiyun Chen ; Greene R. L. ; Venkatesan T., “Effect of oxygen content on the structural, transport, and magnetic properties of La1-deltaMn1-deltaO3thin films,” Journal of Applied Physics, vol. 86, No. 11, Dec. 1999, pp. 6327-6330.
J. R. Stetter, W. R. Penrose, S. Yao, “Sensors, Chemical Sensors, Electrochemical Sensors, and ECS,” Journal of The Electrochemical Society, 150 (2), S11-S16 (2003).
B. C. H. Steele, A. Heinzel, “Materials for Fuel-Cell Technologies,” Nature 414, Nov. 2001, pp. 345-352.
A. Reller, J. M. Thomas, D. A. Jefferson, M. K. Uppal, “Superstructures Formed by the Ordering of Vacancies in a Selective Oxidation Catalyst: Grossly Defective CaMnO3,” Proceedings of the Royal Society of London, vol. 394, No. 1807 Aug. 1984, pp. 223-241.
A. J. Millis, “Cooperative Jahn-Teller effect and electron-phonon coupling in La1-xAxMnO3,” Phys. Rev. B 53, 8434-8441 (1996).
Noboru Sakimura, et al, ȁ

Affiliated with

Also associated with

Rating

Sensing a signal in a two-terminal memory array having... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sensing a signal in a two-terminal memory array having..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sensing a signal in a two-terminal memory array having... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2761958