Sense system for dynamic random access memory

Details Sense system for dynamic random access memory Sense system for dynamic random access memory

1991-07-23

1995-05-16

Lee, Benny

Miscellaneous active electrical nonlinear devices, circuits, and

Specific signal discriminating without subsequent control

By amplitude

36518905, 365203, 365205, 365208, G11C 700, G11C 1100, H03K 524

Patent

active

054163714

ABSTRACT:
A dynamic random access memory (DRAM) of 2/3 VDD precharge scheme is disclosed. A latch driving circuit controls the voltage of the common node of a sense latch so as to limit the downward voltage swing of bitlines to 1/3 VDD, a low level restore voltage. The sense latch is coupled to a pair of I/O data lines through PMOS FET column switches. This invention provides high speed memory operation and reduces power consumption.

REFERENCES:
patent: 4368529 (1983-01-01), Furuyama
patent: 4475178 (1984-10-01), Kinoshita
patent: 4508980 (1985-04-01), Puar
patent: 4688063 (1987-08-01), Lu et al.
patent: 4780850 (1988-10-01), Miyamoto et al.
patent: 4816706 (1989-03-01), Dhong et al.
patent: 4910711 (1990-03-01), Guo
patent: 4924442 (1990-05-01), Chen et al.
patent: 5029137 (1991-07-01), Hoshi
patent: 5091885 (1992-02-01), Ohsawa
S. Dhong et al., "High-Speed Sensing Scheme for CMOS DRAM's, " IEEE Journal of Solid-State Circuits, vol. 23, No. 1, Feb. 1988, pp. 34-40.
T. Kirihata et al., "A Pulsed Sensing Scheme with a Limited Bit Line Swing," IBM Research, Tokyo Research Lab., IBM Japan pp. 63-64.
T. Kirihata et al., "A 15-ns Experimental DRAM with a Limited-Bit-Line-Swing Sense Amplifier," IBM Research, Toyko Research Lab., IBM Japan, Ltd.

Affiliated with

Also associated with

Rating

Sense system for dynamic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sense system for dynamic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense system for dynamic random access memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-640080