Sense/output circuit for a semiconductor memory device

Details Sense/output circuit for a semiconductor memory device Sense/output circuit for a semiconductor memory device

1999-08-30

2000-05-02

Hoang, Huan

Static information storage and retrieval

Read/write circuit

Differential sensing

36518905, 365194, 365208, G11C 702

Patent

active

060580593

ABSTRACT:
A sense/output circuit is designed for use with a memory device, such as an SDRAM (Synchronized Dynamic Random-Access Memory) device, which is capable of switching off some power-consuming circuit components immediately after the requested data output is completed. This feature can help reduce the power consumption by the overall memory system, making the use of the SDRAM device more cost-effective. Moreover, the reduction of power consumption can be achieved without concerning process parameters, component parameters, and temperature variations. As a result, the delay margin can be reduced compared to the prior art, which also contribute to the reduction of power consumption.

REFERENCES:
patent: 5959910 (1999-09-01), McClure
patent: 5959919 (1999-09-01), Choi

Affiliated with

Also associated with

Rating

Sense/output circuit for a semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sense/output circuit for a semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense/output circuit for a semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1599187