Sense line balance circuit for static random access memory

Static information storage and retrieval – Read/write circuit – For complementary information

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

307279, 365154, 365202, G11C 702, G11C 1140

Patent

active

040992659

ABSTRACT:
A random access memory includes a column of static MOS storage cells. Two sense-write write conductors are coupled to each cell in the column. The first sense-write conductor of each column of storage cells is coupled by means of a first coupling MOSFET to a first bit-sense conductor. The second sense-write conductor of each column of storage cells is coupled, by a second MOSFET to a second bit-sense conductor. Each sense-write conductor is coupled to the other by a first MOSFET having its gate electrode coupled to a circuit for generating a pulse in response to an address input transition. A second balancing MOSFET is coupled between the two bit sense conductors and has its gate also coupled to said circuit. Since at the end of any read or write operation, the two bit sense conductors and the two sense-write conductors of the selected column will be at opposite voltage levels, the output pulse equalizes the voltages of the two sense write conductors and of the two bit sense conductors at a level approximately midway between the voltages of a power supply conductor and ground, so that during the next read cycle the cell need only discharge one of the sense-write conductors and the corresponding bit sense conductor coupled thereto from the midway voltage level to ground, thereby considerably reducing the access time of the memory.

REFERENCES:
patent: 3936810 (1976-02-01), Dunn
patent: 3949383 (1976-04-01), Askin et al.
patent: 3949385 (1976-04-01), Sonoda
patent: 4006469 (1977-02-01), Leehan et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sense line balance circuit for static random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sense line balance circuit for static random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sense line balance circuit for static random access memory will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-281896

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.