Sense circuit of a semiconductor memory device

Details Sense circuit of a semiconductor memory device Sense circuit of a semiconductor memory device

1987-11-19

1988-09-27

Miller, Stanley D.

Static information storage and retrieval

Read/write circuit

Differential sensing

307530, 307270, 307356, 365196, G11C 700, H03K 301

Patent

active

047746920

ABSTRACT:
A sense circuit of a semiconductor memory transistor includes a bit line connected to a memory cell which stores "1" or "0". The sense circuit includes a MOS transistor which has its gate connected to the bit line, its source connected to ground voltage and its drain connected to a supply voltage through a load MOS transistor. The sense circuit also includes a compensating circuit for compensating the voltage at the bit line when the ground voltage has fluctuated. For example, the compensating circuit includes a pull-up circuit for pulling up the voltage at the bit line when the ground voltage has shifted to the positive side and a pull-down circuit for pulling down the voltage at the bit line when the ground voltage has shifted to the negative side, thereby maintaining the relative voltage relationship between the voltage at the bit line and the ground voltage at a proper value.

REFERENCES:
patent: 4506164 (1985-03-01), Higuchi
patent: 4618785 (1986-10-01), Tran
patent: 4692642 (1987-09-01), Fukuzo et al.

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