Sense circuit

Details Sense circuit Sense circuit

1986-02-14

1988-06-14

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Differential sensing

365208, G11C 702

Patent

active

047516828

ABSTRACT:
A sense circuit for sensing a memory state of a memory transistor in a semiconductor memory device by determining whether the memory transistor is on or off is provided. The sense circuit includes a first load P-channel MOS transistor for supplying a first current to the memory transistor, a reference transistor capable of passing a second current same in magnitude as the on current of the memory transistor, and a second load P-channel MOS transistor for supplying the second current to the reference transistor, whereby the second load P-channel MOS transistor is operatively coupled to the first load P-channel MOS transistor.

REFERENCES:
patent: 4270190 (1981-05-01), Jindra et al.
patent: 4494219 (1985-01-01), Tanaka et al.

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