Sense amplifying magnetic tunnel device

Details Sense amplifying magnetic tunnel device Sense amplifying magnetic tunnel device

2006-03-07

2006-03-07

Mai, Son (Department: 2827)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S158000

Reexamination Certificate

active

07009903

ABSTRACT:
A sense amplifying magnetic tunnel (SAMT) device is disclosed. In a particular embodiment, a field effect transistor (FET) having a drain, a source, a channel therebetween, a gate electrode and a tunneling gate oxide proximate to the channel is provided. In addition, a spin valve memory (SVM) cell is provided electrically coupled to the gate electrode. The electrical coupling between the SVM cell and the gate electrode serves to provide a control potential to the gate. In addition, the coupling provides a gain to a current passed through the SAMT device.

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patent: 6711053 (2004-03-01), Tang

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