Sense amplifying circuit for a semiconductor memory with...

Details Sense amplifying circuit for a semiconductor memory with... Sense amplifying circuit for a semiconductor memory with...

2006-09-26

2006-09-26

Elms, Richard (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S208000, C365S189011

Reexamination Certificate

active

07113436

ABSTRACT:
Provided is a circuit for use in a semiconductor memory optimized to improve data read ability at low supply voltages. Circuit includes a direct sense AMP circuit, an input/output gate circuit, and an operation control unit. The direct sense AMP circuit transmits read data loaded in a bit line pair including first and second bit lines to a data input/output pair including first and second data input/output lines in response to a read command signal. The input/output gate circuit which, in response to a read/write signal, also passes the read data loaded in the bit line pair directly to the data input/output line pair, and passes write data loaded in the data input/output line pair directly to the bit line pair. The operation control unit which, in response to a column address signal and a write command, generates the read command signal and the read/write signal to turn ON both the direct sense AMP circuit and the input/output gate circuit in a data read operation, or to turn ON the input/output gate circuit and turn OFF the direct sense AMP circuit in a data write operation.

REFERENCES:
patent: 4943944 (1990-07-01), Sakui et al.
patent: 5077689 (1991-12-01), Ahn

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