Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-11-28
2009-02-24
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180
Reexamination Certificate
active
07495961
ABSTRACT:
A sense amplifier of a flash memory device maintains a bit line precharge level before a memory cell is sensed. The sense amplifier maintains the voltage of a bias signal sufficiently high using a second precharging circuit in a precharging operation to stably maintain the bit line precharge level set by a first precharging circuit. Accordingly, the sense amplifier can correctly sense an OFF cell using the stabilized bit line precharge voltage. Related methods and memory devices are also disclosed.
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Cho Ji-ho
Nam Sang-wan
Hidalgo Fernando N
Ho Hoai V
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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